PN2907A, MMBT2907A, PZT2907A دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت PN2907A, MMBT2907A, PZT2907A	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi PN2907ABU
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 800mA
Power Dissipation (Pd): 625mW
Transition Frequency (fT): 200MHz
DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
Collector Cut-Off Current (Icbo): 20nA
Collector-Emitter Breakdown Voltage (Vceo): 60V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.6V@500mA,50mA
Package: TO-92-3
Manufacturer: onsemi
Series: -
Packaging: Bulk
Part Status: Active
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: PN290
detail: Bipolar (BJT) Transistor PNP 60V 800mA 200MHz 625mW Through Hole TO-92-3